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Photoluminescence of ZnSe Epilayers on GaAs Under Hydrostatic Pressure

Published online by Cambridge University Press:  21 February 2011

Judah A. Tuchman ,
Zhifeng Sui ,
Irving P. Herman ,
R. L. Gunshor ,
L. A. Kolodziejski ,
D. A. Cammack  and
M. Shone
Judah A. Tuchman
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
Zhifeng Sui
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
Irving P. Herman
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
R. L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
L. A. Kolodziejski
Affiliation:
Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
D. A. Cammack
Affiliation:
North American Philips Corporation, Briarcliff Manor, NY 10510
M. Shone
Affiliation:
North American Philips Corporation, Briarcliff Manor, NY 10510
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Abstract

The near bandgap photoluminescence of ZnSe epilayers grown on GaAs substrates is measured for pressures up to ∼25 kbar using a diamond anvil cell at T = 9 K. The bandgap changes with pressure, dE/dp, for pseudomorphic and nonpseudomorphic films are obtained, and are compared with results for bulk crystalline ZnSe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 471
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Kleiman, J., Park, R.M., and Qadri, S.B., J. Appl. Phys. 61, 2067 (1987).Google Scholar
2. Petruzzello, J., Greenberg, B.L., Cammiack, D.A., and Dalby, R., J. Appl. Phys. 63, 2299 (1988).Google Scholar
3. Yao, T., Okada, Y., Matsui, S., Ishida, K., and Fujimoto, I., J. Crystal Growth 81, 518 (1987).Google Scholar
4. Yao, T., Jpn. J. Appl. Phys. 25, L544 (1986).Google Scholar
5. Mohammed, K., Cammack, D.A., Dalby, R., Newbury, P., Greenberg, B.L., Petruzzello, J., and Bhargava, R.N., Appl. Phys. Lett. 50, 37 (1987).Google Scholar
6. Gunshor, R.L., Kolodziejski, L. A., Melloch, M.R., Vaziri, M., Choi, C., and Otsuka, N., Appl. Phys. Lett. 50, 200 (1987).Google Scholar
7. Edwards, A.L., Slykhouse, T.E., and Drickamer, H.G., J. Phys. Chem. Solids 11, 140 (1959).Google Scholar
8. Ves, S., Strossner, K., Christensen, N.E., Kim, C.K., and Cardona, M., Solid State Commun. 56, 479 (1985).Google Scholar
9. Jaszczyn-Kopec, P., Canny, B., Syfosse, G., and Hamel, G., Solid State Commun. 49, 795 (1984).Google Scholar
10. Jayaraman, A., Rev. Mod. Phys. 55, 65 (1983).Google Scholar
11. Merrill, L. and Bassett, W.A., Rev. Sci. Instrum. 45, 290 (1974).Google Scholar
12. Jephcoat, A.P., Mao, H.K., and Bell, P.M., J. Geophys. Res. 91, 4677 (1986).Google Scholar
13. Noack, R.A. and Holzapfel, W.B., in High Pressure Science arid Technology, ed. Timmerhaus, K.D. and Barber, M.S. (Plenum) 1, 748 (1979).Google Scholar
14. Asai, H. and Oe, K., J. Appl. Phys. 54, 2052 (1983).Google Scholar
15. Walle, C.G. Van de, Shahzad, K., and Olego, D.J., J. Vac. Sci. Technol. B6, 1350 (1988).Google Scholar
16. Mitra, S.S. and Massa, N.E., in Handbook on Semiconductors, ed. Moss, T.S. (North Holland) 1, 96 (1986).Google Scholar
17. , Landolt-Bomstein, Numerical Data and Functional Relationships in Science and Technology (Springer, New York) Group III, 17 a-b, (1982).Google Scholar
18. Langer, D.W., Euwema, R.N., Era, K., and Koda, T., Phys. Rev. B2, 4005 (1970).Google Scholar