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The Passivation of Gallium Arsenide Surfaces with Selenium from Gaseous Sources

Published online by Cambridge University Press:  25 February 2011

G. Y. Gu ,
E. A. Ogryzlo ,
P. C. Wong  and
K. A. R. Mitchell
G. Y. Gu
Affiliation:
Department of Chemistry, University of British Columbia, Vancouver, B.C., Canada, V6T 1Z1
E. A. Ogryzlo
Affiliation:
Department of Chemistry, University of British Columbia, Vancouver, B.C., Canada, V6T 1Z1
P. C. Wong
Affiliation:
Department of Chemistry, University of British Columbia, Vancouver, B.C., Canada, V6T 1Z1
K. A. R. Mitchell
Affiliation:
Department of Chemistry, University of British Columbia, Vancouver, B.C., Canada, V6T 1Z1
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Abstract

Two techniques were used to apply a thin layer of selenium to GaAs (100) surfaces: (a) the thermal decomposition of hydrogen selenide at 120°C, and (b) the deposition of gaseous selenium formed in the reaction of hydrogen atoms with H2Se. Angle dependent XPS measurements show that AsxSey, but not GaxSey, forms on the surface in both cases. This work therefore establishes a surface behavior for selenium on GaAs(100) which contrasts with that described earlier for sulfur on this surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 287
Copyright
Copyright © Materials Research Society 1992

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References

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