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Optimization of SI-Wafer Cleaning and the use of Buffer-Layers for Epitaxial Growth of Sige-Layers by VLPCVD at T = 650 C

Published online by Cambridge University Press:  25 February 2011

Matty R. Caymax ,
J. Poortmans ,
A. Van Ammel ,
W. Vandervorst ,
J. Vanhellemont  and
J. Nijs
Matty R. Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Van Ammel
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Nijs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

For low-temperature epi-growth in UHV-CVD-systems, the pre-epi, ex-situ cleaning of Si-wafers is known to be very critical. Various ways of etching the chemical oxide-layer after RCA-cleaning have been analysed by SIMS-measurements of the interfacial C, 0 and Bcontamination. Layer growth was performed at 650 C under a flow of 20 sccm of silane at 0.26 Pa. The best results (C and 0 below 2 % of a monolayer, and no detectable amounts of B) were obtained with “dry” etch-procedures, i.e. in which no water-rinse was applied after a normal 2 % HF-dip, or where 1F-vapour was used instead. Growth of Si1-xGex-layers with x < 0.1 succeeds quite well on such prepared substrates; for x between 0.1 and 0.25, we have found the use of a thin, pure Si-buffer layer (150 Å) to be indispensable. For x > 0.25, the growing layer can become quite rough, although this varies in time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 461
Copyright
Copyright © Materials Research Society 1992

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References

BIBLIOGRAPHY

1. Meyerson, B. S., Appl. Phys. Lett. 48, 12, 797 (1986).Google Scholar
2. Caymax, M., Poortmans, J., Ammel, A. Van and Nijs, J. F. in Proceedings of the Second International Conference on Electronic Materials. edited by Chang, R.P.H., Geis, M., Meyerson, B., Miller, D. A.B. and Ramesh, R. (Mater. Res. Soc. Proc., Pittsburgh, PA 1990) pp. 519–524.Google Scholar
3. Greve, D.W. and Racanelli, M., J. Vac. Sci. Technol. B 8(3), 511 (1990).Google Scholar
4. Meyerson, B. S., Himpsel, F. J. and Uram, K. J., Appl. Phys. Lett., 57(10), 1034 (1990).Google Scholar
5.see, e.g. Zazzera, L. A. and Moulder, J. F., J. Electrochem. Soc. 136(2), 484 (1989).Google Scholar
6. Racanelli, M., Greve, D. W., Hatalis, M. K. and Ijzendoorn, L. J. Van, J. Electrochem. Soc. 138 (12), 3783 (1991).CrossRefGoogle Scholar
7. Burggraaf, P., Semic. Int., 52 (1990) and ref. therein.Google Scholar
8. Ohmi, T., Kasama, Y., sugiyama, K., Mizuguchi, Y., Yagi, Y., Inaba, H. and < Kawakami, , Microcontamination, 3, 27 (1990).Google Scholar
9. Caymax, M., Poortmans, J., A. Van Ammel, Nijs, J., Vandervorst, W., Vanhellemont, J. and Brijs, B., Paper F6.9, this Conference.Google Scholar
10. Casel, A., Kasper, E., Kibbel, H. and Sasse, E., J. Vac. Soc. Technol. B 5 (6), 1650 (1987).CrossRefGoogle Scholar
11. Robbins, D.J., Glasper, J. L., Pidduck, A. J. and Cullis, A. G. in Proceedings of the Second International Conference on Electronic Materials edited by Chang, R.P.H., Geis, M., Meyerson, B., Miller, D. A.B. and Ramesh, R. (Mater. Res. Soc. Proc., Pittsburgh, PA 1990) pp. 477–482.Google Scholar
12. Stevie, F. A., Martin, E.P. Jr, Kahora, P.M., Cargo, J. T. and Nanda, A. K., J. Vac. Sci. Techn. A9, 2813 (1991).Google Scholar
13. Suzuki, S. and Itoh, T., J. Appl. Phys., 54, 6385 (1983).Google Scholar
14. Poortmans, J., Caymax, M., A. Van Ammel, Jain, S. C., Nijs, J. and Mertens, R., accepted for presentation at the 22nd European Solid State Device Research Conference, September 1992.Google Scholar
15. Bean, J. C., Feldman, L. C., Fiori, A. T., Nakahara, S. and Robinson, I. K., J. Vac. Sci. Techn. A 2, 436 (1984).Google Scholar