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Optical Observation of Quantum-Size Effect in the Amorphous Silicon/Amorphous Silicon Carbide Multilayer

Published online by Cambridge University Press:  26 February 2011

Kiminori Hattori ,
Takeshi Mori ,
Hiroaki Okamoto  and
Yoshihiro Hamakawa
Kiminori Hattori
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560 Japan
Takeshi Mori
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560 Japan
Hiroaki Okamoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560 Japan
Yoshihiro Hamakawa
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, 560 Japan
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Abstract

A staircase structure reflecting quantum-size effect has been observed in differential optical absorption spectra in a-Si:H/a-SiC:H multilayer and a-Si:H ultrathin single layer. The threshold energies for the identified subband transition are found to be consistent with those expected from one-dimensional quantum-well model involving a conservation rule for the subband index. The experimental approaches introduced here will open up new possibilities for investigating the quantized band structure as well as for establishing the design concept of functional elements based on quantum size effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 355
Copyright
Copyright © Materials Research Society 1988

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References

1. For example, Abeles, B., and Tiedje, T., in Semiconductors and Semimetals (Academic, New York, 1984), Vol.21, Part C, p. 407.Google Scholar
2. Cardona, M., Modulation Spectroscopy (Academic, New York, 1969).Google Scholar
3. Eastman, D. E., Phys. Rev. 2, 1 (1970).CrossRefGoogle Scholar
4. Fowler, R. H., Phys. Rev. 38, 45 (1931).CrossRefGoogle Scholar
5. Hirose, M., in Technical Digest of the 3rd International Photovoltaic Sciences and Engineering Conference, Tokyo, 1987, edited by Takahashi, K. (Tokyo, 1987), p. 651.Google Scholar
6. Pfost, D., Liu, Hsiang-na, Vardeny, Z., and Tauc, J., Phys. Rev. B30, 1083 (1984).CrossRefGoogle Scholar
7. For example, Frova, A., and Selloni, A., in Tetrahedrally-Bonded Amorphous Semiconductors (Plenum, New York and London, 1985), p. 271.CrossRefGoogle Scholar
8. Hess, K., Vojak, B. A., Holonyak, N. Jr., Chin, R., and Dapkus, P. D., Solid-State Electron. 23, 585 (1980).CrossRefGoogle Scholar
9. Dutta, N. K., J. Appl. Phys. 53, 7211 (1982).CrossRefGoogle Scholar
10. Hattori, K., Mori, T., Okamoto, H., and Hamakawa, Y., Appl. Phys. Lett. 51, 1259 (1987).CrossRefGoogle Scholar
11. Roxlo, C. B., Abeles, B., and Persans, P. D., Appl. Phys. Lett. 45, 1132 (1984).CrossRefGoogle Scholar
12. Miyazaki, S., Ihara, Y., and Hirose, M., Phys. Rev. Lett. 59, 125 (1987).CrossRefGoogle Scholar