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On the Structure of Carbon Films Deposited on Si(111) by Mass-Selected Low Energy C+ Beams

Published online by Cambridge University Press:  21 February 2011

J. L. Robertson ,
X. G. Jiang ,
P. C. Chow ,
S. C. Moss ,
Y. Lifshitz ,
S. R. Kasi ,
J. W. Rabalais  and
F. Adar
J. L. Robertson
Affiliation:
Physics Department, University of Houston, Houston, TX 77204-5504
X. G. Jiang
Affiliation:
Physics Department, University of Houston, Houston, TX 77204-5504
P. C. Chow
Affiliation:
Physics Department, University of Houston, Houston, TX 77204-5504
S. C. Moss
Affiliation:
Physics Department, University of Houston, Houston, TX 77204-5504
Y. Lifshitz
Affiliation:
Chemistry Department, University of Houston, Houston, TX 77204-5641
S. R. Kasi
Affiliation:
Chemistry Department, University of Houston, Houston, TX 77204-5641
J. W. Rabalais
Affiliation:
Chemistry Department, University of Houston, Houston, TX 77204-5641
F. Adar
Affiliation:
Instruments SA, Inc., Edison, NJ 08820-2419
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Abstract

Our recent report of epitaxial single crystal growth of C+ ion-beam-deposited diamond films on (111) single crystals of silicon is shown to be incorrect. We briefly describe the circumstances leading to this revision (and to our earlier finding) and discuss the possible structure of these films based on preliminary synchrotron X-ray data and on the Raman spectrum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 152: Symposium H – Optical Materials: Processing and Science , 1989 , 9
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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