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Novel Applications of Rapid Thermal Chemical Vapor Deposition for Nanoscale MOSFET’s

Published online by Cambridge University Press:  10 February 2011

J. C. Sturm ,
M. Yang ,
C. L. Chang  and
M. S. Carroll
J. C. Sturm
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
M. Yang
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
C. L. Chang
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
M. S. Carroll
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
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Abstract

In this paper we examine several applications of Rapid Thermal Chemical Vapor Deposition (RTCVD) for the fabrication of sub-100 rum MOSFET's. Vertical dual-gated MOSFET’s are used as a test vehicle to implement FET's of very short channel length. To realize such devices, the ability of epitaxial Si1-x-y, GexCy layers for suppressing the thermal diffusion, transient enhanced diffusion, and oxidation enhanced diffusion of boron both in the Si1-x-y, GexCy and in nearby Si layers is very useful Novel gate electrodes deposited by RTCVD also showed the ability to greatly reduce boron penetration in ptype polycrystalline gates for p-channel FET’s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 273
Copyright
Copyright © Materials Research Society 1998

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References

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