Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-16T01:21:30.490Z Has data issue: false hasContentIssue false
  • English
  • Français

Non-Resonant Two-Photon Absorption-Induced Photoluminescence Study on ZnO Nanostructures Epitaxially Grown on Si (100) Substrates by Chemical Vapor Deposition Method

Published online by Cambridge University Press:  31 January 2011

Zhuo Chen ,
Tom Salagaj ,
Christopher Jensen ,
Karlheinz Strobl ,
V Hongpinyo ,
Boon Ooi ,
Mim Nakarmi  and
Kai Shum
Zhuo Chen
Affiliation:
zhuochen@brooklyn.cuny.edu, brooklyn college, brooklyn, New York, United States
Tom Salagaj
Affiliation:
tsalagaj@cvdequipment.com, CVD Equpment Corp, Ronkonkoma, New York, United States
Christopher Jensen
Affiliation:
cjensen@firstnano.com, CVD Equpment Corp, Ronkonkoma, New York, United States
Karlheinz Strobl
Affiliation:
kstrobl@cvdequipment.com, CVD Equpment Corp, Ronkonkoma, New York, United States
V Hongpinyo
Affiliation:
hdo0@lehigh.edu, Lehigh University, Bethlehem, Pennsylvania, United States
Mim Nakarmi
Affiliation:
mlnakarmi@brooklyn.cuny.edu, brooklyn college, brooklyn, New York, United States
Kai Shum
Affiliation:
kshum@brooklyn.cuny.edu, Brooklyn College, Physics, 2900 Bedford Ave, Brooklyn, New York, 11210, United States
Get access

Abstract

We report on experimental results of non-resonant two-photon absorption-induced photoluminescence in ZnO nanostructures, which may act as a possible route to excite ZnO nanostructure based lasers. Epitaxial ZnO nanorod-like nanostructure was grown on pre-seeded Si (100) substrates by chemical vapor deposition (CVD) method with a mixed ZnO/C solid source. Crystalline ZnO seeds were prepared and controlled by the rapid thermal annealing (RTA) treatment of e-beam deposited amorphous ZnO thin films with various thicknesses.

Keywords

chemical vapor deposition (CVD) (deposition)nanostructureoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA09-13
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Mollwo, E. in Semiconductors: Physics of II-VI and I-VII Compounds, Semimagnetic Semiconductors, edited by Madelung, O., Schulz, M. and Weiss, H. (Springer, Berlin, 1982), vol. 17 of Landolt-B ornstein New Series, p. 35.Google Scholar
2 O'Kane, E., Phys. Rev. B 18, 6849(1978).Google Scholar
3 Sun, X. W. and Kwok, H. S. J. Appl. Phys. 86, 408(1999).Google Scholar
4 Ozgur, U. et al. , J. Appl. Phys. 98, 043101(2005).Google Scholar
5 Look, D. L. J. Electronic Materials 35, 1299(2006).Google Scholar
6 Zhang, C. F. et al. , Appl. Phys. Lett. 87, 051920(2005).Google Scholar
7 Zhang, C. F. et al. , Appl. Phys. Lett., 89, 042117(2006).Google Scholar
8 Zhu, G. P. et al. , Appl. Phys. Lett., 94, 051106(2009).Google Scholar