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Nonradiative Investigation Of Hole Photoionization Spectrum Of EL2 In Semi-Insulating GaAs

Published online by Cambridge University Press:  15 February 2011

T. Ikari ,
A. Fukuyama ,
Y. Morooka ,
K. Yoshino ,
K. Maeda  and
Y. Akashi
T. Ikari
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University1-1 Gakuen-kibanadai, Miyazaki 889-21, Japan
A. Fukuyama
Affiliation:
Department of Materials Science, Miyazaki University, 1-1 Gakuen-kibanadai, Miyazaki 889-21, Japan
Y. Morooka
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University1-1 Gakuen-kibanadai, Miyazaki 889-21, Japan
K. Yoshino
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University1-1 Gakuen-kibanadai, Miyazaki 889-21, Japan
K. Maeda
Affiliation:
Department of Electrical and Electronic Engineering, Miyazaki University1-1 Gakuen-kibanadai, Miyazaki 889-21, Japan
Y. Akashi
Affiliation:
Department of Materials Science, Miyazaki University, 1-1 Gakuen-kibanadai, Miyazaki 889-21, Japan
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Abstract

The piezoelectric photoacoustic (PPA) measurements before and after the secondary light illumination for 3 minutes were carried out at 85 K to investigate the electron and hole photoionization processes of EL2 in carbon concentration controlled semi-insulating (SI) GaAs. The result showed a broad peak around 1.0 eV and a hump up to the band gap energy. These were due to hole and electron photoionization processes of EL2, respectively, and these processes were clearly observed from a nonradiative recombination point of view for the first time. In addition, we found that the hole photoionization process of EL2 is not influenced by the secondary light illumination at low temperature. Although the electron photoionization underwent photoquenching effect upon an illumination of 1.12 eV, the hole photoionization process did not change even after a long period of illumination. The positively charged EL2 donor state may not transform to the metastable state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 423
Copyright
Copyright © Materials Research Society 1997

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References

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