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Non-Gaussian 1 / f Noise and Conductance Fluctuations in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

C. E. Parman ,
N. E. Israeloff  and
J. Kakalios
C. E. Parman
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
N. E. Israeloff
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
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Abstract

Statistical analysis of the 1/f noise power spectrum of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the noise arises from a small number of correlated fluctuators. The noise power displays a complicated time dependence with the noise power changing in both magnitude and as a function of frequency. Spectral analysis of these noise power fluctuations display an approximate 1/f frequency dependence. These results are surprising given the effective volume (∼10-7 cm3) of the sample, and indicate that cooperative dynamics govern conductance fluctuations in a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 741
Copyright
Copyright © Materials Research Society 1992

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