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Nondestructive Compositional and Defect Characterization of CdZnTe Alloys Using Photoluminescence Spectroscopy

Published online by Cambridge University Press:  21 February 2011

W.M. Duncan ,
R.J. Koestner ,
J.H. Tregilgas ,
H.-Y. Liu  and
M.-C. Chen
W.M. Duncan
Affiliation:
Central Research Laboratories, Texas Instruments, Inc., Dallas, TX 75265
R.J. Koestner
Affiliation:
Central Research Laboratories, Texas Instruments, Inc., Dallas, TX 75265
J.H. Tregilgas
Affiliation:
Central Research Laboratories, Texas Instruments, Inc., Dallas, TX 75265
H.-Y. Liu
Affiliation:
Central Research Laboratories, Texas Instruments, Inc., Dallas, TX 75265
M.-C. Chen
Affiliation:
Central Research Laboratories, Texas Instruments, Inc., Dallas, TX 75265
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Abstract

Results from high resolution helium temperature photoluminescence (PL) spectroscopy have been correlated to precision lattice constant and transport measurements and to theoretical band gap versus composition behavior. It is found that low temperature PL spectra provide precise determination (+/- 0.02%) of ZnTe mole fraction as well as carrier type, relative impurity concentration and point defect properties of these substrates. In addition helium and room temperature PL results are correlated to determine the accuracy of room temperature measurements for composition determination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 39
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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