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Nondestructive Characterization Of The Surface Aging Of HgI2 Crystal

Published online by Cambridge University Press:  15 February 2011

H. Yao ,
J. C. Erickson ,
R. B. James  and
M. Natarajan
H. Yao
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588-0511, hyao@unl.edu
J. C. Erickson
Affiliation:
University of Nebraska, Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, Lincoln, NE 68588-0511, hyao@unl.edu
R. B. James
Affiliation:
Sandia National Laboratories Livermore, CA 94551
M. Natarajan
Affiliation:
TN Technologies, Round Rock, TX 78680
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Abstract

Variable angle spectroscopic ellipsometry (VASE) and atomic force microscopy (AFM) measurements have been employed to characterize the surface aging of HgI2 crystals. A surface model including top surface roughness and subsurface defects was established and studied by VASE analysis, as a function of real time, after the 10% KI chemical etching. In this model, the surface defects associated with the surface aging were modeled by the Bruggeman effective-medium approximation (EMA) as a HgI2/voids mixed layer. The relative 2-dimensional (2D) surface-defectdensities were monitored as the surface aging proceeds. The VASE measurements indicated that high surface aging rates were related to high initial effective 2D surface-defect densities. The AFM profile revealed increasing physical surface roughness as surface aging took place. The cleaved HgI2 crystal surface presented a smooth surface and the lowest surface aging rate, while the as-grown HgI2 surface also presented a very low surface aging. The HgI2 surfaces baked at elevated temperatures presented accelerated surface aging phenomena after a 30 min. baking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 611
Copyright
Copyright © Materials Research Society 1997

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