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Nonalloyed Ohmic Contacts to N-Si Using a Strained Si0.5Ge0.5 Buffer Layer

Published online by Cambridge University Press:  03 September 2012

Hsing-Kuen Liou ,
Edward S. Yang  and
K. N. Tu
Hsing-Kuen Liou
Affiliation:
Department of Electrical Engineering, Columbia University, New York, N.Y. 10027
Edward S. Yang
Affiliation:
Department of Electrical Engineering, Columbia University, New York, N.Y. 10027
K. N. Tu
Affiliation:
Department of Materials Science and Engineering, University of California at Los AngelesLos Angeles, C.A. 90024
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Abstract

Nonalloyed shallow ohmic contacts to n-Si have been fabricated by using an 80 Å thick strained Si0.5Ge0.5 buffer layer grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core level binding energies of the strained and the relaxed Si0.5Ge0.5 and to determine their relative Fermi level positions. It was found that the surfaces of strained Si0.5Ge0.5 exhibit pinning very close to the conduction band. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W or Pt as contact metals. In the case of Pt, a 500 Å W diffusion barrier can protect the ohmic behavior up to 550 °C for 30 min. The specific contact resistance of the Pt/W/Si0.5Ge0.5/n-Si contact extracted from the D-type cross-bridge Kelvin resistor was 3.5x10-5 Ω·cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 317
Copyright
Copyright © Materials Research Society 1994

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References

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