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Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

Published online by Cambridge University Press:  26 February 2011

T. Sawada ,
W. X. Chen ,
E. D. Marshall ,
K. L. Kavanagh ,
T. F. Kuech ,
C. S. Pai  and
S. S. Lau
T. Sawada
Affiliation:
University of California at San Diego, La Mia, CA 92093
W. X. Chen
Affiliation:
University of California at San Diego, La Mia, CA 92093
E. D. Marshall
Affiliation:
University of California at San Diego, La Mia, CA 92093
K. L. Kavanagh
Affiliation:
Cornell University, Ithaca, N. Y. 14853
T. F. Kuech
Affiliation:
IBM Watson Research Center, Yorktown Heights, N.Y. 10598
C. S. Pai
Affiliation:
University of California at San Diego, La Mia, CA 92093
S. S. Lau
Affiliation:
University of California at San Diego, La Mia, CA 92093
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Abstract

Alloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 409
Copyright
Copyright © Materials Research Society 1986

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References

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