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Nitridation of Hafnium Silicate Thin Films

Published online by Cambridge University Press:  28 July 2011

Hood Chatham ,
Yoshi Senzaki ,
Jeff Bailey  and
Wesley Nieveen
Hood Chatham
Affiliation:
Aviza Technology, Inc., 440 Kings Village Road, Scotts Valley, CA 95066, U.S.A.
Yoshi Senzaki
Affiliation:
Aviza Technology, Inc., 440 Kings Village Road, Scotts Valley, CA 95066, U.S.A.
Jeff Bailey
Affiliation:
Aviza Technology, Inc., 440 Kings Village Road, Scotts Valley, CA 95066, U.S.A.
Wesley Nieveen
Affiliation:
Charles Evans and Associates/Evans Analytical Group, 810 Kifer Road, Sunnyvale, CA, 94086, U.S.A.
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Abstract

We discuss the nitridation of ALD-deposited hafnium silicate films by exposure to atomic nitrogen generated in a remote nitrogen plasma. Nitrogen concentration [N] as measured by X-ray photoelectron spectroscopy (XPS) is determined as a function of the nitridation temperature and other process conditions. Nitrogen concentrations up to 13.7 atomic % were achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D7.5
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Wilk, G., Wallace, R. M., and Anthony, J. M., J. Appl. Phys., 89, 5243 (2001).Google Scholar
2. Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Shanware, A., and Colombo, L., Appl. Phys. Lett. 80, 3183 (2002).Google Scholar
3. Senzaki, Y., Chatham, H., Higuchi, R., Bercaw, C., and DeDontney, J. in Physics and Technology of High-k Gate Diectrics II, Kar, S., Singh, R., Misra, D., Iwai, H., Houssa, M., Morais, J., and Landheer, D., Editors, PV 2003-22, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).Google Scholar
4. Senzaki, Y., Park, S. G., Higuchi, R., Bartholomew, L., Chatham, H., Al-Lami, S., Barelli, C., Lee, S.I., Helms, A. Jr. in Advanced Short-Time Thermal Processing for Si-Based CMOS Devices/2003, Roozeboom, F., Gusev, E., Chen, L.-J., Ozturk, M. C., Kwong, D.-L., and Timans, P. J., Editors, PV 2003-14, p. 423, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).Google Scholar
5. CRESLAF, copyright 2000, Reaction Designs. SPIN is part of the CHEMKIN Collection, Release 3.7, R.J. Lee et al., Reaction Designs, Inc, San Diego, CA (2000).Google Scholar
6. SPIN, copyright 2000, Reaction Designs. SPIN is part of the CHEMKIN Collection, Release 3.7, R.J. Lee et al., Reaction Designs, Inc, San Diego, CA (2000).Google Scholar
7. Adams, S.F. and Miller, T.A., Plasma Sources Sci and Technol. 9 (2000) 1–8.Google Scholar
8. Nieveen, W., Scheuller, B., Goodman, G., Schnabel, P., Moskito, J., Mowta, I., and Chao, G., paper presented at the 2003 AVS SIMS-14 Conference (proceedings to be published by Elsevier-North Holland Press).Google Scholar
9. Nieveen, W. (unpublished results).Google Scholar