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Multistep Resonant Excitation of Erbium Ions in Thin Silicon Oxide Layers

Published online by Cambridge University Press:  01 February 2011

Z. Fleischman ,
Chr. Sandmann ,
V. Dierolf ,
M. White ,
Y. Zhao ,
J. Michel ,
M.A. Stolfi  and
L. Dal Negro
Z. Fleischman
Affiliation:
Physics Department, Lehigh University, Bethlehem, PA 18015
Chr. Sandmann
Affiliation:
Physics Department, Lehigh University, Bethlehem, PA 18015
V. Dierolf
Affiliation:
Physics Department, Lehigh University, Bethlehem, PA 18015
M. White
Affiliation:
Electrical and Computer Engineering Department, Lehigh University, Bethlehem, PA 18015
Y. Zhao
Affiliation:
Electrical and Computer Engineering Department, Lehigh University, Bethlehem, PA 18015
J. Michel
Affiliation:
Materials Science, MIT, Cambridge, MA 02139
M.A. Stolfi
Affiliation:
Materials Science, MIT, Cambridge, MA 02139
L. Dal Negro
Affiliation:
Materials Science, MIT, Cambridge, MA 02139
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Abstract

Using the site-selective technique of combined excitation emission spectroscopy, we have studied a variety of Er doped silicon oxide layers with and without silicon nanocrystals. This technique allows clear distinction of cluster defect sites that are created during thermal annealing and become dominant for higher Er ion concentration and are suppressed by the presence of nanocrystals. In several samples, we were able to observe fluorescence line narrowing under resonant excitation allowing defect-selective excitation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V1.5
Copyright
Copyright © Materials Research Society 2005

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References

[1] Castagna, M. E., Coffa, S., Caristia, L., and Messina, A., Proceedings of ESSDERC 2002.pg. 439.Google Scholar
[2] Fujii, M., Yoshida, M., Kanzawa, Y., Hayashi, S., and Yamamoto, K, Appl. Phys. Lett. 71, 1198 (1997)Google Scholar
[3] Chryssou, C., Kenyon, A., Iwayama, T., Pitt, C., and Hole, D., Appl. Phys. Lett. 75, 2011 (2003).Google Scholar
[4] Franzo, G., Vinciguerra, V., and Priolo, F., Appl. Phys. A 69, 3 (1999).Google Scholar
[5] Dierolf, V., Sandmann, C., Zavada, J., Chow, P., and Hertog, B., J. Appl. Phys. 95, 5464 (2004).Google Scholar