Hostname: page-component-6bf8c574d5-w79xw Total loading time: 0 Render date: 2025-02-19T11:47:21.750Z Has data issue: false hasContentIssue false
  • English
  • Français

Monte Carlo Simulations of Defect Relaxation in Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Thomas Unold  and
Howard M. Branz
Thomas Unold
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Howard M. Branz
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Get access

Abstract

The structural memory model of slow defect relaxation in a-Si:H is extended to the limit of long defect filling times. The model was proposed in order to explain unusual, defect filling-time dependent capacitance transients that were observed for short defect filling times. For long defect filling pulses however, the experiments show normal charge emission transients that saturate into filling-time independent transients. We present two possibilities for explaining the approach to saturation within the structural memory model. Results of Monte Carlo simulations of the models are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 293
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Cohen, J.D., Leen, T.M., and Rasmussen, R.J., Phys. Rev. Lett. 69, 3358 (1992).Google Scholar
[2] Carlen, M.W., Xu, Y., and Crandall, R.S., Phys. Rev. B 51, 2173 (1995).Google Scholar
[3] Branz, H.M. and Fedders, P.A., MRS Conf. Proc. 336, 129 (1994).Google Scholar
[4] Fedders, P. A. and Branz, H.M. J. non-Cryst. Solids (1995) in press.Google Scholar
[5] Jackson, W.B. and Johnson, N.M., this volume.Google Scholar
[6] Riess, B. and Bässler, H., J. Mol. Electronics 3, 15 (1987).Google Scholar