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Microstructure Analysis of Agglomerated Epitaxial Columns of Si/PtSi/Si(111) Double Heterostructure

Published online by Cambridge University Press:  03 September 2012

Kyung-Ho Park ,
Y. Kumagai  and
F. Hasegawa
Kyung-Ho Park
Affiliation:
Tsukuba Research & Development Center, Texas Instruments, Tsukuba, 305, Japan
Y. Kumagai
Affiliation:
Institute of Materials Science, Tsukuba University, Tsukuba, 305, Japan
F. Hasegawa
Affiliation:
Institute of Materials Science, Tsukuba University, Tsukuba, 305, Japan
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Abstract

Micro structures and interface structures of epitaxially grown PtSi and over-capping Si films on Si(111) substrates prepared by MBE were studied by RHEED, HREM, SEM and XRD. An epitaxially grown Si layer on the PtSi layer, which was fabricated by coevaporation of Pt and Si with the stoichiometric ratio (Pt/Si=l/1), was obtained as a Si(111)/PtSi(010)/Si(111) double heterostructure at the substrate temperature of 400°C. On the other hand, it was found that the PtSi layer transformed into epitaxial columns and/or walls when a Si over-capping layer was grown on the PtSi layer at a substrate temperature of 600°C or higher. These columns and/or walls were surrounded by a Si matrix which showed epitaxial relations to the Si substrate with stacking faults.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 403
Copyright
Copyright © Materials Research Society 1994

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