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Microscopic Morphology of Gallium Clusters on GaAs(001)

Published online by Cambridge University Press:  25 February 2011

T. D. Lowes  and
M. Zinke-Allmang
T. D. Lowes
Affiliation:
University of Western Ontario, Department of Physics, London, Ontario, Canada N6A 3K7
M. Zinke-Allmang
Affiliation:
University of Western Ontario, Department of Physics, London, Ontario, Canada N6A 3K7
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Abstract

A microscopic study of the system Ga/GaAs(001) is presented to explain the origin for different Ga cluster shapes on a single surface. The model is based on the finding that a significant fraction of the Ga clusters reaches below the GaAs surface plane and the shape of these depressions represents a minimum energy configuration if low-index planes are formed. Other metal/compound semiconductor systems may display similar shape modifications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 351
Copyright
Copyright © Materials Research Society 1993

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References

Ren, Y., Zinke-Allmang, M., Feldman, L. C. and van Saarloos, W., Mat. Res. Soc. Symp. Proc. 237, 255 (1992).Google Scholar
[2] Zinke-Allmang, M., Feldman, L. C. and van Saarloos, W., Phys. Rev. Lett. 68, 2358 (1992).Google Scholar
[3] Lowes, T. D. and Zinke-Allmang, M., submitted.Google Scholar