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Microscopic Identification of Defects in Semiconductors by Electron-Spin-Resonance and Related Techniques

Published online by Cambridge University Press:  28 February 2011

Jorgen Schneider
Jorgen Schneider*
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik Eckerstraβe 4, D-7800 Freiburg, Federal Republic of Germany
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Abstract

This talk will review and compare very basic intrinsic and extrinsic paramagnetic defect structures which are characteristic for group IIB-VI, III-V and elemental semiconductors. The case of cation vacancy related defects in ZnS and ZnSe, that of antisite defects in GaP and GaAs and that of deep impurity donors in IIB-VI semiconductors and silicon will be treated as representative examples, thus illustrating the possibilities (and limitations) of the ESR technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 13
Copyright
Copyright © Materials Research Society 1985

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