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Memory retention of doped SbTe phase change line cells measured isothermally and isochronally

Published online by Cambridge University Press:  01 February 2011

Jasper L.M. Oosthoek ,
Bart J. Kooi ,
Karen Attenborough ,
Fred A.M. Hurkx  and
Dirk J. Gravesteijn
Jasper L.M. Oosthoek
Affiliation:
j.l.m.oosthoek@rug.nl
Bart J. Kooi
Affiliation:
b.j.kooi@rug.nl, Materials Innovation Institute M2i and Zernike Institute for Advanced Materials, University of Groningen, Groningen, Netherlands
Karen Attenborough
Affiliation:
karen.attenborough@nxp.com, NXP-TSMC Research Center, Leuven, Belgium
Fred A.M. Hurkx
Affiliation:
fred.hurkx@nxp.com, NXP-TSMC Research Center, Leuven, Belgium
Dirk J. Gravesteijn
Affiliation:
dirk.gravesteijn@nxp.com, NXP-TSMC Research Center, Leuven, Belgium
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Abstract

Doped SbTe phase change (PRAM) line cells produced by e-beam lithography were cycled for at least 100 million times. The memory retention of the PRAM cell was measured both isothermally and isochronally which showed excellent agreement. An activation energy for growth of 1.7 eV was found (after 100 million cycles) for both measurements. Similar isothermal and isochronal measurements were performed on PRAM cells produced by optical lithography which yielded activation energies of 3.0 eV and 3.3 eV, respectively. Our results show that the same phase-change material can show large differences in retention behavior depending on the way the cells are produced.

Keywords

phase transformationamorphouselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G14-04-H07-04
Copyright
Copyright © Materials Research Society 2010

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