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Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown

Published online by Cambridge University Press:  10 February 2011

T. Nigam ,
R. Degraeve ,
G. Groeseneken ,
M. Heyns  and
H.E. Maes
T. Nigam
Affiliation:
Bell-labs, Lucent Technologies, Murray Hill, NJ, IMEC, Leuven, Belgium.
R. Degraeve
Affiliation:
Bell-labs, Lucent Technologies, Murray Hill, NJ, IMEC, Leuven, Belgium.
G. Groeseneken
Affiliation:
Bell-labs, Lucent Technologies, Murray Hill, NJ, IMEC, Leuven, Belgium.
M. Heyns
Affiliation:
Bell-labs, Lucent Technologies, Murray Hill, NJ, IMEC, Leuven, Belgium.
H.E. Maes
Affiliation:
Bell-labs, Lucent Technologies, Murray Hill, NJ, IMEC, Leuven, Belgium.
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Abstract

For sub-5 nm oxides there are two different stages for breakdown; soft breakdown (SBD) and hard breakdown (HBD). It has been shown that both SBD and HBD exhibit the same statistics. Therefore, the physical mechanism governing them is the same. The major difference between them is the energy transferred from the capacitor to the localized conducting path. In this paper, a simple equivalent circuit is proposed to explain the effect of the measurement technique, oxide thickness, and test structure area on the detection of soft breakdown. Also an inelastic quantum tunneling model is proposed to discuss the current-voltage characteristics after SBD. The model is also successful in explaining the temperature dependence of SBD IV characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 337
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1]DiMaria, D. J., Cartier, E., and Arnold, D., J. Appl. Phys., 73, 7, pp. 3367–3384 (1993)Google Scholar
[2]Degraeve, R., Groeseneken, G., Bellens, R., Ogier, J. L., Depas, M., Roussel, P. J., and Maes, H. E., IEEE Trans. Electron Devices, 45, (4), pp. 904–911 (1998)Google Scholar
[3]Depas, M., Nigam, T., and Heyns, M.M., IEEE Trans. Electron Devices, 30, (9), pp. 1499–1504 (1996)Google Scholar
[4]Halimaoui, A., Briere, O., and Ghibaudo, G., Microelectronic Engineering, 36, (1-4), pp. 157–160 (1997)Google Scholar
[5]Okada, K., Kawasaki, S., Hirofuji, Y., Ext. Absr. of the 1994 SSDM, Yokohama, pp. 565–567, (1994)Google Scholar
[6]Weir, B.E., Silverman, P.J., Monroe, D., Krisch, K.S., Alam, M. A., Alers, G.B., Sorsch, T.W., Timp, G.L., Bauman, F., Liu, C.T., Ma, Y., and Hwang, D., IEDM Tech. Dig., pp. 73–76 (1997)Google Scholar
[7]Alers, G.B., Weir, B.E., Alam, M. A., Timp, G.L. and Sorsch, T.W. Int. Rel. Phys. Sym. Proceedings, pp.76–79, (1998)Google Scholar
[8]Yashida, T., Miyazaki, S., and Hirose, M., Ext. Absr. of the SSDM, pp. 539–541, (1996)Google Scholar
[9]Okada, K., and Taniguchi, K.Appl. Phys. Lett., 70, (3), pp. 351–353 (1997)Google Scholar
[10]Houssa, M., Nigam, T., Mertens, P. W., and Heyns, M. M., Appl. Phys. Lett., 73, (-), pp. 514–516 (1998)Google Scholar
[11] Single Charge tunneling: Coulomb blockade Phenomena in Nanostructures NATO ASI Series 1992. Edited by Grabert, H., and Devoret, M. H..Google Scholar
[12]Kamakura, Y., Sakura, T., Okada, K. et al. Dielectric Workshop, Tokyo, Japan, 1999Google Scholar