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Low Temperature Silicon Epitaxy Grown by Electron-Beam Evaporation in an Ultra-High Vacuum System

Published online by Cambridge University Press:  21 February 2011

Yung-Jen Lin  and
Tri-Rung Yew
Yung-Jen Lin
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
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Abstract

This paper presents the results of silicon epitaxial growth on silicon windows surrounded with oxide walls by electron-beam evaporation in an ultra-high vacuum system with a load-lock chamber. The wafer surface was in-situ cleaned in the growth chamber to remove native oxide by thermal desorption at about 840 °C and a base pressure of better than 2 × 10-9 Torr. The growth temperature was 200°C or higher. The pre-epitaxial silicon surface structure was inspected by reflection high energy electron diffraction (RHEED). The influence of the thermal desorption on the quality of the epi/substrate interface and epitaxial layers was studied. In addtion, the deposition parameters which control the epitaxial quality were investigated. The epitaxial films were characterized by cross-sectional trasmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 555
Copyright
Copyright © Materials Research Society 1992

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References

VI. REFERENCES

1. Houghton, R. F., Patel, G., Leong, W. Y., Whall, T. E., Parker, E. H. C, Kubiak, R. A. A., and Nayler, R., J. of Crystal Growth, 81, 326 (1987)Google Scholar
1. Kasper, E. and Schaffler, F., Physica Scripta, Vol. 29, 147 (1989)CrossRefGoogle Scholar
3. Hirayama, H. and Tatusmi, T., Appl. Phys. Lett., 55, 131 (1989)Google Scholar
4. Lu, S. W., Nieh, C. W., and Chen, L. J., Appl. Phys. Lett., 49, 1770 (1986)CrossRefGoogle Scholar
5. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc., 133, 666 (1986)Google Scholar