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Low Temperature Direct Reactions Between Elemental Silicon and Liquid Ammonia or Amines for Ceramics and Chemical Intermediates

Published online by Cambridge University Press:  25 February 2011

Eloise A. Pugar  and
Peter E.D. Morgan
Eloise A. Pugar
Affiliation:
Rockwell International Science Center, Thousand Oaks, CA 91360
Peter E.D. Morgan
Affiliation:
Rockwell International Science Center, Thousand Oaks, CA 91360
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Abstract

Direct processes that may be used to manufacture high purity silicon nitride or silicon carbide are described. Elemental silicon has been found to react directly with liquid ammonia and amines at low temperature to yield compounds for both the ceramic and chemical industries. Silicon-amine direct reactions, previously thought not to occur, were investigated by using 29Si NMR, IR, UV, Raman, XRD, ICP, EDS and TGA methods to detect and characterize product formation. The [Si,N,H] and [Si,C,N,H] products transform to silicon nitride or silicon carbide respectively when heated above 1300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 121: Symposium H – Better Ceramics Through Chemistry III , 1988 , 439
Copyright
Copyright © Materials Research Society 1988

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