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Local Phonon Heating and Recombination-Enhanced Defect Annealing

Published online by Cambridge University Press:  25 February 2011

V.N. Abakumov ,
A.A. Pakhomov  and
I.N. Yassievich
V.N. Abakumov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Leningrad, U.S.S.R
A.A. Pakhomov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Leningrad, U.S.S.R
I.N. Yassievich
Affiliation:
A.F. Ioffe Physico-Technical Institute, Leningrad, U.S.S.R
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Abstract

A detailed study of local phonon heating due to multiphonon recombination process is presented. Nonequilibrium distribution of defects by vibration energy is calculated taking into account the dependence of capture and emission rates on the defect energy. It is shown that multiphonon generation and recombination of electron-hole pairs stimulate diffusion of defects in energy space. The results are used to calculate the rate of recombination-enhanced defect annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 495
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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