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KOH-ETCH Related Defects on Processed Silicon Wafers

Published online by Cambridge University Press:  25 February 2011

Laurent E. Kassel
Laurent E. Kassel*
Affiliation:
National Semiconductor, Fairchild Research Center, M/S E-120, P.O. Box 58090, Santa Clara, CA 95052
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Abstract

KOH, an anisotropic etchant of monocrystalline Si, may cause roughness and defects whose shapes are related to crystallographic orientations. This paper studies the effect of processing steps on the formation of geometric etch defects. Implantation, thermal treatment, epitaxial growth or photoresist were not the source of such defects. In the scope of this study, only unwanted damage caused geometric etch defects. This makes the observation of the wafer after KOH etch a good indicator of the quality of previous steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 187
Copyright
Copyright © Materials Research Society 1992

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References

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