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Kinetics of Light-Induced Degradation of a-Si:H Solar Cells Compared to I-Layer Films

Published online by Cambridge University Press:  21 February 2011

X.R. Li ,
S. Wagner ,
M. Bennett  and
S. Fonash
X.R. Li
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
M. Bennett
Affiliation:
Solarex Thin Film Division, Newtown, PA 18940
S. Fonash
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

We report the CPM defect density of a-Si:H material and the performance characteristics of pin solar cells during high-intensity light-soaking. In one group of experiments we compared the effects of soaking with monochromatic light from a Kr+ laser to white light from a Xe arc lamp. The effects are identical for the same electron-hole pair generation rate. In a second group of experiments we light-soaked at the two different temperatures of 50°C and 90°C. At 90°C the defect density saturates at a lower value than at 50°C, and correspondingly the cell performance parameters saturate at higher values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 899
Copyright
Copyright © Materials Research Society 1992

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References

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