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Kinetics of Chemical Vapor Deposition of Sic Between 750 and 850°C at 1 Bar Total Pressure

Published online by Cambridge University Press:  15 February 2011

Dieter Neuschütz  and
Farzin Salehomoum
Dieter Neuschütz
Affiliation:
Prof. Dr.-Ing. D. Neuschütz and Dipl.-Ing. F. Salehomoum, Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen, D-5100 Aachen, Germany
Farzin Salehomoum
Affiliation:
Prof. Dr.-Ing. D. Neuschütz and Dipl.-Ing. F. Salehomoum, Lehrstuhl für Theoretische Hüttenkunde, Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen, D-5100 Aachen, Germany
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Abstract

The deposition rate from mixtures of methyltrichlorosilane (MTS), hydrogen and methane was measured thermogravimetrically using a hot wall vertical reactor and planar SiC substrates. Below 850 °C and at sufficiently high gas velocities, the rate of the phase boundary reaction could be determined. In the absence of CH4 and at H2 :MTS=55, Si was deposited together with SiC. Addition of CH4 lowered the Si content, pure SiC being deposited at CH4 :MTS above 10. The deposition rate j in the range 750 to 850 °C follows the equation with E(Si) = 160 and E(SiC) = 300 kJ/mol. Reaction mechanisms are presented to account for the observed reaction orders with respect to MTS. Between 900 and 970 °C, the reaction rate decreased with temperature indicating a change in the deposition mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 41
Copyright
Copyright © Materials Research Society 1992

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