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Ion-Implanted Amorphous Silicon Studied by Variable Coherence TEM

Published online by Cambridge University Press:  10 February 2011

J-Y. Cheng ,
J. M. Gibson ,
P. M. Voyles ,
M. M. J. Treacy  and
D. C. Jacobson
J-Y. Cheng
Affiliation:
University of Illinois, Department of Materials Science and Engineering, Urbana, IL 61801, jcheng1@uiuc.edu
J. M. Gibson
Affiliation:
Argone National Laboratories, Materials Science Division, 9700 S. Cass Ave, Argone, IL 60439
P. M. Voyles
Affiliation:
University of Illinois, Department of Physics, Urbana, IL 61801 4NEC Research Institute
M. M. J. Treacy
Affiliation:
Independence Way, Princeton, NJ 08540
D. C. Jacobson
Affiliation:
Lucent Bell Laboratories, 600 Mountain Ave, Murray Hill, NJ 07974
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Abstract

Amorphous silicon formed by ion-implantation of crystalline silicon is investigated with the use of VC-TEM (variable-coherence transmission electron microscopy). This technique is sensitive to medium-range-order structures. The results from high-energy Si implanted samples showed a striking similarity to sputtered amorphous silicon. We found that both ion-implanted and sputtered samples have paracrystalline structures, rather than the expected continuous random network (CRN). We also observed the structural relaxation of the ion-implanted amorphous silicon after ex-situ thermal annealing towards the random network. The more disordered structures are favored and a large heat of relaxation is released as the temperature increases. Finally, we show some preliminary results on the structural variation with the sample depth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 589 , 1999 , 247
Copyright
Copyright © Materials Research Society 2001

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