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Ion Implantation Related Defects in GaAs

Published online by Cambridge University Press:  26 February 2011

K. S. Jones ,
M. Bollong ,
T. E. Haynes ,
M. D. Deal ,
E. L. Allen  and
H. G. Robinson
K. S. Jones
Affiliation:
Dept. of Mat. Sci. & Eng., Univ. of FL, Gainesville, FL
M. Bollong
Affiliation:
Dept. of Mat. Sci. & Eng., Univ. of FL, Gainesville, FL
T. E. Haynes
Affiliation:
Oak Ridge Nat'l. Lab., Oak Ridge, TN
M. D. Deal
Affiliation:
Dept. of Elec. Eng., Stanford Univ., Stanford, CA
E. L. Allen
Affiliation:
Dept. of Mat. Sci. & Eng., Stanford Univ., Stanford, CA
H. G. Robinson
Affiliation:
Dept. of Mat. Sci. & Eng., Stanford Univ., Stanford, CA
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Abstract

Extended defect formation is studied in ion implanted GaAs. A number of different species including Si+, Al+, Mg+, Ge+, As+, and Sn* have been investigated. Cross-sectional TEM studies have been done comparing the as-implanted structure (amorphous or crystalline) with the final defect location and morphology. The defects are identified by the same classification scheme used for implanted and annealed silicon. It is found that the threshold dose for type I defect formation is very sensitive to the implant energy for heavier ion masses. Type II, III and IV defects are unstable at annealing temperatures below 900°C. Type V defects are of a loop morphology for Si* and Ge* implants. The source of the interstitials may be a kickout process as the implanted species moves onto substitutional sites. Type V defects for Sn implants appear as precipitates which at the annealing temperature appear to be migrating in the liquid phase. Upon cooling the Sn precipitates, in many cases, solidify as grey (α) Sn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 785
Copyright
Copyright © Materials Research Society 1992

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References

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