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Interface Reactions and Electrical Behaviour of Ni-AuGe Contacts on GaAs

Published online by Cambridge University Press:  26 February 2011

A P Botha  and
E Relling
A P Botha
Affiliation:
National Institute for Materials Research, CSIR, PO Box 395, Pretoria, OOOl, South Africa
E Relling
Affiliation:
National Institute for Materials Research, CSIR, PO Box 395, Pretoria, OOOl, South Africa
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Abstract

Interdiffusion and reaction in the GaAs/AuGe/Ni and GaAs/Ni/AuGe/Ni thin film systems have been investigated, using Auger Electron Spectroscopy depth profiling and Rutherford Backscattering Spectrometry. The roles of the individual metal layers were determined by studying the GaAs/AuGe, GaAs/Ni and GaAs/Ni/AuGe subsystems. It was found that the interfacial layer in the GaAs/Ni/AuGe/Ni contact scheme prevents Ge from diffusing away from the interface. In this way more efficient doping of the GaAe is possible. Current-Voltage measurements indicate that this layer structure forms a good ohmic contact to GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 421
Copyright
Copyright © Materials Research Society 1986

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References

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