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(In,Ga)As Quantum Dot Array Formation by Self-Organized Anisotropic Strain Engineering of an (In,Ga)As/GaAs Quantum Wire Template: Shallow-Pattern Effects
Published online by Cambridge University Press: 01 February 2011
Abstract
One-dimensional (In,Ga)As quantum dot (QD) arrays are formed on planar singular and shallow-patterned (mesa gratings) GaAs (100) substrates by self-organized anisotropic strain engineering of an (In,Ga)As/GaAs quantum wire (QWR) superlattice (SL) template in molecular beam epitaxy. On planar singular substrates, highly uniform one-dimensional single QD arrays, which are extended over 10 μm length, are realized with efficient photoluminescence. The shallow mesa gratings along [0–11] and [011] induce two different types of steps which differently affect the surface migration processes crucial for QWR template development, i.e., strain driven In adatom migration along [011] and surface reconstruction induced adatom migration along [0–11]. While type-A steps along [0–11] have no significant effect on the adatom migration along [011] and [0–11], type-B steps along [011] hinder the surface reconstruction induced migration along [0–11] to prevent formation of QWR and ordered QD arrays.
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- Copyright © Materials Research Society 2004