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Influence of Pre-Oxidation of an Ir Film on Chemical Composition and Crystal Property of a PZT Film Deposited on the Ir Film by Sputtering

Published online by Cambridge University Press:  28 July 2011

Susumu Horita  and
Makoto Shoga
Susumu Horita
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1, Asahidai, Tatsunokuchi, Ishikawa, JAPAN
Makoto Shoga
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1, Asahidai, Tatsunokuchi, Ishikawa, JAPAN
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Abstract

We investigated the influence of pre-oxidation of an Ir film as a bottom electrode on the chemical composition and crystal property of the PZT film deposited on it by RF sputtering, changing the sputtering target composition ratio Zr/Ti to be 20/80, 52/48 or 80/20. The Ir film deposited on a thermally oxidized Si substrate was pre-oxidized at 600°C for 20 min in the O2 gas of 10 Pa. The XRD patterns showed a strong PbO(101) peak from the PZT film on the oxidized Ir film for Zr/Ti = 52/48, but no PbO peak from the film on a no oxidized Ir film. The RBS measurement showed that the film composition ratio of Pb/(Zr+Ti) on the pre-oxidized Ir film was much larger than that on the no oxidized Ir film. For Zr/Ti=20/80, the same tendency was observed. However, for Zr/Ti=80/20, the chemical composition of the PZT film on the pre-oxidized Ir film was almost equal to that without oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D3.18
Copyright
Copyright © Materials Research Society 2004

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References

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