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Influence Of Open-Tube Ga Diffusion On The Characteristics For Thyristor

Published online by Cambridge University Press:  10 February 2011

Wen Ruimei  and
Pei Suhua
Wen Ruimei
Affiliation:
Institute of Semiconductors, Chinese Academia Science, P. R. of China
Pei Suhua
Affiliation:
Institute of Semiconductors, Shandong Normal University, Jinan, 250014, P.R. of China
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Abstract

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 219
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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