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Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

Gerry Lucovsky ,
Yider Wu ,
Yi-Mu Lee ,
Hanyang Yang  and
Hiro Niimi
Gerry Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202 Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202 Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Yider Wu
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Yi-Mu Lee
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Hanyang Yang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
Hiro Niimi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Direct tunneling limits aggressive scaling of thermally-grown oxides to about 1.6 nm, a thickness at which the tunneling current. Jg, at one volt is ∼1 A/cm2. This paper presents results that demonstrate that stacked gate dielectrics prepared by remote plasma processing that include i) ultra-thin nitrided SiO2 interfacial layers, and ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness, EOT, to 1.1-1.0 nm before Jg, > 1 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 317
Copyright
Copyright © Materials Research Society 2000

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