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Improved Thermal Stability of CVD WSi. During Furnace Oxidation by a Rapid Thermal Anneal Pretreatment

Published online by Cambridge University Press:  10 February 2011

Alain P. Blosse
Alain P. Blosse*
Affiliation:
Cypress Semiconductor, 3901 North First Street, San Jose, CA 95134, alain-blosse@ieee.org
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Abstract

In this paper, we report new results on tungsten silicide ( WSix ) degradation during furnace oxidation. During Poly-oxidation step performed after gate patterning, a deformed oxide is grown on WSix /Poly gate lines giving rise to protrusions (or nodules) at the interface between the two materials. Different parameters were evaluated including oxidation conditions, WSix deposition parameters, WSix capping dielectric and thermal treatments. The first conclusion of these experiments is that protrusions can be eliminated if Si/W ratio in as-deposited material is greater than 2.6 when no furnace thermal treatment is done on the WSix. /Poly stack before furnace oxidation. The more important conclusion is that addition of a Rapid Thermal pretreatment with a temperature range between 700 and 1000 degrees done just after WSix /Poly etch and before furnace oxidation eliminates totally the defects. Both results can be explained with internal stress reduction in the WSix film which lead to suppression of accelerated oxidation kinetics at the interface between polysilicon and WSix films during furnace oxidation after gate patterning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 371
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Murarka, S.P., Silicides for VLSI Applications, Academic Press ISBN 0-12-511220-3Google Scholar
2. Yoo, C. S., Lin, T. H, Tsai, N. S., Ijendoorn, L. J., Jpn. J. of Appl.Phys., Vol.29, No.11, 1990 2535 Google Scholar
3. Zirinski, S., Hammer, W., d'Heurle, F., and Baglin, J.. Appl. Phys. Letter. 33. 76 (1978)Google Scholar
4. Hsieh, N., Nesbit, L., J. Electrochem. soc. 131, 1984, p. 204 Google Scholar
5. Telford, S. G, Eizenberg, M, Chang, M, Sinha, A. K.,T.R.Grow in J.Electrochem. Soc., Vol.140 No.12, 1993 p. 3689 Google Scholar
6. Byun, S., Lee, B. H., Park, J. S., Kim, J. J. in J.Electrochem.Soc., Vol.144, No. 10, 1997 p. 3572 Google Scholar
7. Mashiko, Y., Ohsaki, A., Okamoto, T., Fukumoto, K. in Jpn.J.Appl.Phys, Vol.35, Part. 1, No. 2A, 1996, p.584 Google Scholar
8. Sadana, D. K., Morgan, A. E, Norcott, M. H., Naik, S. in J.Appi.Phys, Vol 7,1987, p.2830 Google Scholar
9. Ozkan, C. S., Moinpour, M., Sarikaya, M., Mat. Res. Soc.Symp.Proc, Vol 427 1996 p297 Google Scholar
10. Shenai, K., IEEE Trans. on Electrons Devices, Vol.39, 1992, p 193 Google Scholar
11. Washidzu, G., Hara, T., Miyamoto, T., Inoue, T. Appl. Phys. Lett. 58 (13), p. 1425 Google Scholar
12. Nobili, C., Bosi, M., Ottaviani, G., Queirolo, G., Bacci, L. in Appi Surf. Science,Vol 53 1991 p.219 Google Scholar
13. Liao, K., Tu, T., Chen, K., Su, W., Tan, W. VMIC Conference proceedings, 1997 p. 644 Google Scholar