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Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers

Published online by Cambridge University Press:  25 February 2011

S. J. Pearton ,
F. Ren ,
L. A. D'Asaro ,
W. S. Hobson ,
T. R. Fullowan ,
J. Lothian ,
C. R. Abernathy ,
R. F. Kopf  and
J.-M. Kuo
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. A. D'Asaro
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. F. Kopf
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.-M. Kuo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The formation of high resistivity (> 107 Ω□) regions in GaAs-AlGaAs HBT and SEED structures by oxygen and hydrogen ion implantation is described. Multiple energy implants in the dose range 1013 cm−3 (for O+) and 1015 cm−2 (for H+), followed by annealing around 500°C are necessary to isolate structures ∼2 μm thick. In each case, the evolution of the sheet resistance of the implanted material with annealing is consistent with a reduction in hopping probabilities of trapped carriers between deep level states for temperatures up to ∼600°C, followed by significant annealing of these deep levels. A comparison of the relative thermal stability of O+ or H+ ion implantisolated p+ material is given. Small geometry (2 × 9 μm2) HBTs exhibiting current gain of 44 and cut-off frequency fT as high as 45 GHz are demonstrated using implant isolation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 451
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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