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Imaging Oxide-Covered Doped Silicon Structures Using Low-Energy Electron Microscopy

Published online by Cambridge University Press:  01 February 2011

Meredith Anderson ,
C.Y. Nakakura ,
K.F. Saiz  and
G.L. Kellogg
Meredith Anderson
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
C.Y. Nakakura
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
K.F. Saiz
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
G.L. Kellogg
Affiliation:
mlande@sandia.gov, Sandia National Laboratories, XXX, XXX, Albuquerque, NM, 87123, United States
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Abstract

Low energy electron microscopy (LEEM) operated at incident electron energies just above the “mirror” mode is used to image Si-based test devices. Significant p- vs. n- doping contrast is observed, even when the structures are covered with a ∼3.5 nm thermal oxide. The contrast arises from a difference in surface potential between the two regions and is related to both p-n work function differences and electron-beam-induced charging of the oxide. The results show that the LEEM is capable of characterizing pn junctions without complicated sample preparation and that it is a promising technique for rapid, non-destructive imaging of microelectronic devices.

Keywords

Simicroelectronicsnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C15-03
Copyright
Copyright © Materials Research Society 2008

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