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Identification Of The Native Vacancy Defects In ZnSxSe1−x And MgyZn1−y SxSe1−x by Positron Annihilation

Published online by Cambridge University Press:  15 February 2011

K. Saarinen ,
T. Laine ,
K. Skog ,
J. Oila ,
P. Hautojärvi ,
K. Rakennus ,
P. Uusimaa ,
A. Salokatve  and
M. Pessa
K. Saarinen
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
T. Laine
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
K. Skog
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
J. Oila
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
P. Hautojärvi
Affiliation:
Laboratory of Physics, Helsinki University of Technology, 02150 Espoo, Finland
K. Rakennus
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
P. Uusimaa
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
A. Salokatve
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
M. Pessa
Affiliation:
Dept. of Physics, Tampere Univ. of Technology, P. O. Box 692, 33101 Tampere, Finland
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Abstract

We show how positron annihilation can distinguish vacancies in the different sublattices of a compound semiconductor by performing experiments in ZnSxSe1−x and Mgy Zn1−ySxSe1−x layers. We identify the Se vacancies (Vse) in N-doped and the Zn vacancies (Vzn) in Cl-doped material by the shape of the core electron momentum distribution. The charge of the defect involving VSe is neutral or negative in the p-type alloys, suggesting that the Se vacancy is complexed with an acceptor. The concentration of the VSe complexes is high (≥ 1018 cm−3 ), indicating that their role is important in the electrical compensation of p-type ZnSxSe1−x and MgyZn1−y SxSe1−x.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 567
Copyright
Copyright © Materials Research Society 1997

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