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Hydrogenated Amorphous Silicon Thin-Film Deposition by Direct Photo-Enhanced Decomposition of Silane Using an Internal Hydrogen Discharge Lamp.

Published online by Cambridge University Press:  28 February 2011

P. A. Robertson  and
W. I. Milne
P. A. Robertson
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge CB2 1PZ, England.
W. I. Milne
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge CB2 1PZ, England.
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Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Å/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 31
Copyright
Copyright © Materials Research Society 1986

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References

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