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Hydrogen Diffusion in Undoped a-Si:H

Published online by Cambridge University Press:  26 February 2011

S. F. Chou ,
R. Schwarz ,
Y. Okada ,
D. SLOBODIN  and
S. Wagner
S. F. Chou
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
R. Schwarz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 Now with Physik-Department, Technical University of Munich, Germany.
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. SLOBODIN
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 Now with Polaroid Corporation, Waltham, Massachusetts.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We measured the diffusion coefficient of H in a-Si:H between 36°C and 690°C via H2-evolution and the pressure rise in a closed ampoule. Our measurement temperatures reached ∼110°C above the highest T reported to date. The diffusion coefficient for unalloyed a-Si:H, DH=1.66×10−3 exp [−1.45 eV/kT] cm2 s−1, agrees with the earlier, lower-T, measurements. Between 250°C and 690°C the H-diffusion mechanism in a-Si:H appears to remain the same, with DH ranging from 10−17 cm2s−1 to 10−10cm 2s−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 165
Copyright
Copyright © Materials Research Society 1987

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References

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