Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-15T09:08:00.779Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Quality GaN Grown by Molecular Beam Epitaxy on Ge(001)

Published online by Cambridge University Press:  10 February 2011

H. Siegle ,
Y. Kim ,
G. S. Sudhir ,
J. Kruger ,
P. Perlin ,
J. W. Ager ,
C. Kislelowski  and
E. R. Weber
H. Siegle
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
Y. Kim
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
G. S. Sudhir
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
J. Kruger
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
P. Perlin
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
J. W. Ager
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720
C. Kislelowski
Affiliation:
Lawrence Berkeley National Laboratory, National Center for Electron Microscopy, Berkeley, California 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, UC Berkeley, Berkeley, CA 94720
Get access

Abstract

We report on growth of GaN on Germanium as an alternative substrate material. The GaN films were deposited on Ge(001) substrates by plasma-assisted molecular beam epitaxy. Atomic force microscopy, x-ray diffraction, photoluminescence, and Raman spectroscopy were used to characterize the structural and optical properties of the films. We observed that the Ga/N ratio plays a crucial role in determining the phase purity and crystal quality. Under N-rich conditions the films were phase-mixed, containing cubic and hexagonal GaN, while in the Ga-rich regime they were purily hexagonal. The latter samples show bandedge luminescence with linewidths as small as 31 meV at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 451
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kisielowski, C., Kriiger, J., Ruvimov, S., Suski, T., IIIAger, J. W., Jones, E., Lilienthal-Weber, Z., Rubin, M., Weber, E. R., Bremser, M. D., Davis, R. F., Phys. Rev. B 54, 17745(1996)10.1103/PhysRevB.54.17745Google Scholar
2. Kruiger, J., Shapiro, N., Subramanya, S., Kim, Y., Siegle, H., Perlin, P., E,Weber, R., Wong, W.S., Sands, T., Cheung, N.W., Molnar, R. J., this MRS meetingGoogle Scholar
3. Landolt-Bornstein Tables, edited by Madelung, O., Schulz, M., and Weiss, H. (Springer, Berlin 1982)Google Scholar
4. Anders, A., Newman, N., Rubin, M., Dickinson, M., Jones, E., Phatak, P., and Gassmann, A., Rev. Sci. Instrum. 67, 905(1996)10.1063/1.1146834Google Scholar
5. Nakada, Y., Aksenov, I., Okumura, H., Appl. Phys. Lett. 73, 827(1998)10.1063/1.122014Google Scholar
6. Yang, B., Trampert, A., 0. Brandt, Jenichen, B., and Ploog, K. H., J. Appl. Phys. 83, 3800(1998)10.1063/1.367144Google Scholar
7. Fujii, H., Kisielowski, C., Krfiger, J., Klockenbrink, R., Leung, M. S. H., Sudhir, G. S., Sohn, H., Rubin, M., and Weber, E. R.; Mat.Res.Soc.Symp.Proc. 449, 227(1997)10.1557/PROC-449-227Google Scholar
8. Light Scattering in Solids I-VI, edited by Cardona, M. and Gfintherodt, G., Topics Appl. Phys. (Springer, Berlin, Heidelberg)Google Scholar
9. Siegle, H., Eckey, L., Hoffmann, A., Thomsen, C., Meyer, B. K., Schikora, D., Hankeln, M., Lischka, K., Solid State Communications 96, 943(1995)10.1016/0038-1098(95)00561-7Google Scholar
10. Harima, H., Inoue, T., Nakashima, S., Okumura, H., Ishida, Y., Yoshida, S., Hamaguchi, H., Paper presented on the ICNS'97, October 27–31, 1997, Tokushima, JapanGoogle Scholar
11. Siegle, H., Gofili, A. R., Thomsen, C., Ulrich, C., Syassen, K., Schöttker, B., As, D. J., Schikora, D., Materials Research Society, Symposium Proceedings Vol. 468, ed. Abernathy, C. R., Amano, H., Zolper, J. C., pp. 225 (1997)10.1557/PROC-468-225Google Scholar
12. Filippidis, L., Siegle, H., Hoffmann, A., Thomsen, C., Karch, K., and Bechstedt, F., Phys. stat. sol. (b) 198, 621(1996)10.1002/pssb.2221980207Google Scholar
13. Siegle, H., Hoffmann, A., Eckey, L., Thomsen, C., Christen, J., Bertram, F., Schmidt, B., Hiramatsu, K., Appl. Phys. Lett. 71, 2490(1997)10.1063/1.120097Google Scholar
14. Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Daweritz, L., and Ploog, K. H., Phys. Rev. B52, R2253 (1995)10.1103/PhysRevB.52.R2253Google Scholar
15. Schikora, D., Hankeln, M., As, D. J., Lischka, K., Litz, T., Waag, A., Buhrow, T., Henneberger, F., Phys. Rev. B54, R8381 (1996)10.1103/PhysRevB.54.R8381Google Scholar
16. Siegle, H., Kaczmarczyk, G., Filippidis, L., Thurian, P., Hoffmann, A., Thomsen, C., Zeitschrift fur Physikalische Chemie 200, 187(1997)10.1524/zpch.1997.200.Part_1_2.187Google Scholar
17. Brodsky, M. H., in Light Scattering in Solids I, edited by Cardona, M. (Springer, Berlin, 1975), pp. 205 10.1007/978-3-540-37568-5_5Google Scholar