Hostname: page-component-6bf8c574d5-26wn4 Total loading time: 0 Render date: 2025-02-14T11:51:49.864Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution Tem Studies of Solid-Phase Epitaxial Si at Contact Holes Through Al-Si Alloy

Published online by Cambridge University Press:  21 February 2011

Norio Hirashita ,
Masako Kinoshita  and
Tsuneo Ajioka
Norio Hirashita
Affiliation:
Oki Electric Industry Co., Ltd., VLSI Research & Development Laboratory, 550-1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
Masako Kinoshita
Affiliation:
Oki Electric Industry Co., Ltd., VLSI Research & Development Laboratory, 550-1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
Tsuneo Ajioka
Affiliation:
Oki Electric Industry Co., Ltd., VLSI Research & Development Laboratory, 550-1 Higashi-asakawa, Hachioji, Tokyo 193, Japan
Get access

Abstract

Microstructural studies of Si precipitated on contact holes through Al-Si alloy has been carried out for 1-Mbit DRAMs using cross-sectional transmission electron microscopy and X-ray microanalysis. Lattice images reveal the perfect epitaxial growth of Si on Si substrates at contacts through Al-Si alloy at temperatues ≤420°C. At the interface between substrates and the solid-phase epitaxial Si, ellipsoidal micro-defects, associated with amorphous oxygen-rich materials containing Al, are observed. In the epitaxial Si evidence of dislocations and twins is found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 381
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ottaviani, G., Sigurd, D., Marrello, V., Mayer, J.W. and McCaldin, J.O., J. Appl. Phys., 45, 1730 (1974).CrossRefGoogle Scholar
2. Canali, C., Campisano, S.U., Lau, S.S., Liau, Z.L., and Mayer, J.W., J. Appl. Phys., 46, 2831 (1975).CrossRefGoogle Scholar
3. Marcus, R.B. and Sheng, T.T., Transmission Electron Microscopy Of Silicon Vlsi Circuits And Structures (John Wiley and Sons, 1983), p. 22.Google Scholar
4. Hull, R., Bean, J.C., Gibson, J.M., Joy, D.C., and Twigg, M.E., Appl. Phys. Let., 49, 1287 (1986).CrossRefGoogle Scholar
5. Wolstenholme, G.R., Jorgensen, N., Ashburn, P., and Booker, G.R., J. Appl. Phys., 61, 225 (1987).CrossRefGoogle Scholar
6. Swalin, R.A., Thermodynamics Of Solids (John Wiley and Sons, 1972), p.116.Google Scholar