Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-19T00:28:38.345Z Has data issue: false hasContentIssue false
  • English
  • Français

A High Resolution Cathodoluminescence (LC-CL) Study on GaAs-AIGaAs Interface

Published online by Cambridge University Press:  28 February 2011

K. Wada ,
A. Kozen  and
N. Inoue
K. Wada
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01
A. Kozen
Affiliation:
NTT Optoelectronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01
N. Inoue
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-01
Get access

Abstract

High resolution cathodoluminescence microscopy (CL) under a magnetic field is proposed and used to study the interface structure of GaAs-AlGaAs single quantum wells. This principle called, Lorentz-force Carrier-confinement (LC), successfully improves the resolution by up to a few thousand Angstrom. Periodic light and dark stripe patterns are observed in LC-CL monochromatic images of the single quantum wells on the intentionally-tilted substrates. It is shown that the stripes represent stair-like stepped interfaces and that the observed terraces are extended and the steps are clustered. Based on the results, a new interface structure model is proposed, that takes the tilting into account.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 437
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Petroff, P.M., Cibert, J., Gossard, A.C., Dolan, G.J. and Tu, C.W.: J. Vac. Sci. & Technol. B5, 1204 (1987).Google Scholar
2. Bimberg, D., Christen, J., Fukunaga, T., Nakashima, H., Mars, D.E. and Miller, J.N.: J. Vac. Sci. & Technol. B5, 1191 (1987).Google Scholar
3. Wada, K., Kozen, A., Fushimi, H., Inoue, N.: Jpn. J. Appl. Phys. 27, L1952 (1988).CrossRefGoogle Scholar
4. Sakaki, H., Noda, T., Hirakawa, K., Tanaka, M. and Matsusue, T.: Appl. Phys. Lett. 51, 1934 (1987).Google Scholar
5. Yamamoto, N. et al. , Unpublished.Google Scholar
6. Weisbuck, C., Dingle, R., Gossard, A.C. and Wiegmann, W., Solid State Commun. 38, 709 (1981).Google Scholar