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HIGH CONTROLLABILITY OF CARRIER CONCENTRATION OF p--LPE InP BY Mn DOPING

Published online by Cambridge University Press:  28 February 2011

T. TANAHASHI ,
M. KONDO ,
T. TAKANOHASHI ,
Y. KOTAKI ,
S. ISOZUMI  and
K. NAKAJIMA
T. TANAHASHI
Affiliation:
FUJITSU LABORATORIES LTD., 10-1, Morinosato-Wakamiya, Atsugi,243-O1, JAPAN
M. KONDO
Affiliation:
FUJITSU LABORATORIES LTD., 10-1, Morinosato-Wakamiya, Atsugi,243-O1, JAPAN
T. TAKANOHASHI
Affiliation:
FUJITSU LABORATORIES LTD., 10-1, Morinosato-Wakamiya, Atsugi,243-O1, JAPAN
Y. KOTAKI
Affiliation:
FUJITSU LABORATORIES LTD., 10-1, Morinosato-Wakamiya, Atsugi,243-O1, JAPAN
S. ISOZUMI
Affiliation:
FUJITSU LABORATORIES LTD., 10-1, Morinosato-Wakamiya, Atsugi,243-O1, JAPAN
K. NAKAJIMA
Affiliation:
FUJITSU LABORATORIES LTD., 10-1, Morinosato-Wakamiya, Atsugi,243-O1, JAPAN
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Abstract

Extremely high controllability of the carrier concentration of p--InP below 1×l0l6 cm−3 has been obtained by using Mn as a dopant. Applying Mndoped p--InP to the current confining layers of 1.3 µm buried heterostructure (BH) laser diodes has enabled threshold currents as low as 12 mA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 43
Copyright
Copyright © Materials Research Society 1986

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