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Helium Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy

Published online by Cambridge University Press:  22 February 2011

Shin Yokoyama ,
Zbigniew J. Radzimski ,
Kensaku Ishibashi ,
Takeshi Watanabe  and
Masataka Hirose
Shin Yokoyama
Affiliation:
Research Center for Integrated Systems, Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima 724, Japan
Zbigniew J. Radzimski
Affiliation:
Analytical Instrumentation Facility, North Carolina State University Raleigh, NC 27695-7917, USA
Kensaku Ishibashi
Affiliation:
Department of Electrical Engineering, Hiroshima University 1-4-1 Kagamiyama, Higashi-Hiroshima 724, Japan
Takeshi Watanabe
Affiliation:
Department of Electrical Engineering, Hiroshima University 1-4-1 Kagamiyama, Higashi-Hiroshima 724, Japan
Masataka Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University 1-4-1 Kagamiyama, Higashi-Hiroshima 724, Japan
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Abstract

An arsenic atom displacement in As+ ion implanted Si induced by He+ ion beam irradiation has been studied by medium-energy (175keV) ion spectroscopy (MEIS). The He+ energy and dose dependences of the displaced arsenic atoms have been examined in the range of 30-175keV and ≤6×10-4C/cm2, respectively. The amount of the displaced arsenic atoms are found to be proportional to the dose and inversely proportional to the nuclear stopping power in the low-dose region, while it saturates at high-dose region. The dose-proportional region is composed of two different proportional coefficient segments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 123
Copyright
Copyright © Materials Research Society 1994

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References

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