Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-15T09:48:55.232Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Self-Seeded Aluminum Nitride by Sublimation-Recondensation and Substrate Preparation

Published online by Cambridge University Press:  17 March 2011

J. Carlos Rojo ,
Glen A. Slack ,
Kenneth Morgan ,
Leo J. Schowalter  and
Michael Dudley
J. Carlos Rojo
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A.
Glen A. Slack
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A.
Kenneth Morgan
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A.
Leo J. Schowalter
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A. on sabbatical from Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Michael Dudley
Affiliation:
SUNY, Stony Brook, NY 11794, U.S.A.
Get access

Abstract

Bulk aluminum nitride boules have been grown at driving rates of 0.9mm/h by the self-seeded sublimation-recondensation technique. Up to 15mm diameter substrates cut from those boules present large single crystal grains that have been analyzed using different techniques. X-ray double crystal diffraction shows a full-width-at-half-maximum of around 100 arcsec and X-ray topography reveals extensive areas with a density of dislocations less than 104 cm−2. These substrates have been prepared by chemical mechanical polishing techniques to obtain a surface roughness of 1.4-1.6nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G1.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Slack, G.A., J. Phys. Chem. Solids, 34, 321 (1973).Google Scholar
[2] Slack, G.A. and McNelly, T.F., J. Crystal Growth, 34, 263 (1976).Google Scholar
[3] Slack, G.A. and McNelly, T.F., J. Crystal Growth, 42, 560 (1977).Google Scholar
[4] Tanaka, M., Nakahata, s., Sogabe, K., Nakata, H., and Tobioka, M., J. Appl. Phys., 36, L1062 (1997).Google Scholar
[5] Audurier, V., Demenet, J.L., Rabier, J., Philos. Mag. A, 77, 825 (1998).Google Scholar
[6] Azzaz, M., Michel, J.P., Feregotto, V., George, A., Mater. Sci. Eng. B, B71, 30 (2000)Google Scholar
[7] Balkas, C.M., Sitar, Z., Zheleva, T., Bergman, L., Nemanich, R., and Davis, R.F., J. Crystal Growth, 179, 363 (1997)Google Scholar