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The Growth Mechanisms of GaSb Epitaxial Film by MOCVD

Published online by Cambridge University Press:  25 February 2011

H. Y. Ueng ,
S. M. Chen ,
Y. K. Su  and
F. S. Juang
H. Y. Ueng
Affiliation:
Dept. of Electrical engineering, National Sun Yat-sen University, Kaohsiung, Taiwain. R. O. C
S. M. Chen
Affiliation:
Dept. of Electrical engineering, National Sun Yat-sen University, Kaohsiung, Taiwain. R. O. C
Y. K. Su
Affiliation:
Dept. of Electrical engineering, National Cheng kung University, Tainan, Taiwain. R. O. C
F. S. Juang
Affiliation:
Dept. of Electrical engineering, National Cheng kung University, Tainan, Taiwain. R. O. C
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Abstract

The growth reaction mechanism was experimentally investigated for TEGa and TMSb used for MOCVD GaSb epitaxial growth. The variations of growth rate, substrate temperature, the V/III ratio and the mole-fraction of III and V source gases, were detailly considered and investigated with regard to their effect on electrical and optical properties were measured during the epitaxial process. The experimental results were used to provide an inspection on defects interaction mechanisms and on the type of conductivity. Based on the investigation of growth mechanism, at 470°, a high quality GaSb epitaxial film 1 with 3 mobility, 634 cm2/V*sec and low hole concentration, 1.67x1016 cm−2 was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 265
Copyright
Copyright © Materials Research Society 1991

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References

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