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Growth and Electrical Performance of Heterojunction P+ Si1−x−yGexCy/p+ Si Diodes

Published online by Cambridge University Press:  15 February 2011

C. L. Chang ,
A. St. Amour ,
L. D. Lanzerotti  and
J. C. Sturm
C. L. Chang
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
A. St. Amour
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
L. D. Lanzerotti
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

We have fabricated heterojunction p+ Si1−x−yGexCy/ p+ Si diodes. The SiGeC layers were grown epitaxially on Si (100) substrates by the rapid thermal chemical vapor deposition (RTCVD) technique using methysilane gas as a carbon precursor. The germanium concentration is 20% in these SiGeC alloys and the carbon concentrations are in the range of 0% to 1%. By studying the current-voltage characteristics of these diodes as a function of temperature the valence band discontinuities between SiGeC and Si layers were obtained as a function of carbon concentrations. We have found that the valence band discontinuity of the SiGe/Si heterostructure decreases by II meV when 1% of carbon is incorporated. Photoluminescence (PL) results show that 1% carbon increases the bandgap of strained p+SiGe alloys by 25 meV. This would imply that the conduction band discontinuity of SiGe/Si will decrease by 14 meV when 1% carbon is incorporated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 437
Copyright
Copyright © Materials Research Society 1996

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References

1. Regolini, J.L., Gisbert, F., Dolino, G., and Boucaud, P., Mat. Lett 18, 57 (1993)Google Scholar
2. Mi, J., Warren, P., Letourneau, P., Judelewicz, M., Gailhanou, M., Dutoit, M., Dubois, C., and Dupuy, J. C., Appl. Phys. Lett. 67, 259 (1995)Google Scholar
3. Amour, A.St., Liu, C.W., Sturm, J.C., Lacroix, Y. and Thewalt, M.L.W., to be published in Appl. Phys. Lett, Dec 25th (1995)Google Scholar
4. Boucaud, P., Francis, C., Julien, F.H., Lourtioz, J.M., Bouchier, D., Bodnar, S., Lambert, B., and Regolini, J.L., Appl. Phys. Lett, 64, 875 (1994)Google Scholar
5. Lin, T.L., and Maserjian, J., Appl. Phys. Lett, 57, 1422 (1990)Google Scholar
6. Jimenez, J.R., Xiao, X., Sturm, J.C., Pellegrini, P.W., and Weeks, M.M., J. Appl. Phys, 75, 5160 (1994)Google Scholar
7. People, R., Bean, J.C., Sputz, S.K., Bethea, C.G., Peticolas, L.J. and Weber, G.R., SPIE, 1735, 176, (1992)Google Scholar
8. Sturm, J.C., Schwartz, P.V., Prinz, E.J., and Manoharan, H., J. Vac. Sci. Technol. B, 9, 2011 (1991)Google Scholar
9. Chang, L.L., Solid State Elec., 8, 721 (1965)Google Scholar