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Growth and Doping of Zinc Selenide by Molecular Bean Epitaxy

Published online by Cambridge University Press:  21 February 2011

J.M. Depuydt ,
H. Cheng ,
M.A. Haase  and
J.E. Potts
J.M. Depuydt
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
H. Cheng
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
M.A. Haase
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
J.E. Potts
Affiliation:
3M Company, 201-1N-35 / 3M Center, St. Paul, MN 55144
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Extract

Recently, with the advent of thermal nonequilibrium growth techniques like molecular beam epitaxy and metalorganic chemical vapor deposition, great progress has been made in overcoming some of the problems traditionally encountered in the growth and doping of ZnSe. Breakthroughs have been made in several areas including the growth of high quality undoped films, in intentional n-type doping and, most importantly, in p-type doping. In this paper we will review the progress made in the growth and doping of ZnSe by molecular beam epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 97
Copyright
Copyright © Materials Research Society 1990

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References

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