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Growth and Characterization of Silicon-Germanium Films on Oxide by VLPCVD/PE-VLPCVD

Published online by Cambridge University Press:  15 February 2011

Julie A. Tsai  and
Rafael Reif
Julie A. Tsai
Affiliation:
Department of Materials Science and Engineering, Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139
Rafael Reif
Affiliation:
Department of Electrical Engineering and Computer Science, Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Results of Si1-xGex deposition on oxide-coated Si substrates using a PE-VLPCVD (Plasma-Enhanced Very-Low-Pressure Chemical Vapor Deposition) reactor are presented. Thin layers of poly-Si1-xGex deposited with SiH4 and GeH4 at ≤ 600°C had low C and O levels. Two growth modes were examined at 500°C: plasma-initiated thermal growth (VLPCVD) and full plasma-enhanced deposition (PE-VLPCVD). In both cases, Ge incorporation increases sublinearly with gas ratio, growth rates increase with Ge content, and the transition temperature between polycrystalline and amorphous deposition is lower for Si1-xGex than Si. On the other hand, compared to thermal growth, plasma-enhanced deposition promotes not only higher growth rates but also improved structural properties such as smoother surface Morphology, More columnar and oriented grains, and the unique feature of direct deposition onto oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 603
Copyright
Copyright © Materials Research Society 1994

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References

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